Analysis of a Tunnel Diode

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概要

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• Starting from an equation of internal emission current, a phenomenological analysis of Esaki effect was made by the introduction of a concept of the availability of empty states in a band to which an electron tunnels. An assumption in the calculation of a tunneling current may not be valid at very low temperatures. Agreement with experiments was found on the tunneling current densities of both Ge and GaAs p-n junctions and the temperature and the bias dependences of the tunneling current. The investigation of the excess current indicated that a thermally activated process might exist.

• 社団法人日本物理学会の論文
• 1962-05-05

著者

• Shibata Akikazu

  Sony Corporation

関連論文

• On the Determination of Minority Carrier Lifetime and Surface Recombination Velocity from the Transient Response of MOS Capacitors
• On the Secondary Tunnelling Phenomena in a p-n Junction of Gallium Arsenide
• Deterioration of GaAs Esaki Diodes
• Analysis of a Tunnel Diode
• Deterioration-Induced Slow Trap in GaAs Esaki Diodes
• Distribution Coefficient of Zinc in Gallium Arsenide
• Relaxation in the Deterioration-Induced Second Peak in Gallium Arsenide Esaki Diodes
• Excess and Thermal Currents in Gallium Arsenide Esaki Diodes

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