Deterioration-Induced Slow Trap in GaAs Esaki Diodes

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1963-12-15

著者

• Shibata Akikazu

  Sony Corporation Research Laboratory

• Shibata Akikazu

  Sony Corporation

• Shibata A.

  Sony Corporation Research Laboratory

関連論文

• On the Determination of Minority Carrier Lifetime and Surface Recombination Velocity from the Transient Response of MOS Capacitors
• On the Secondary Tunnelling Phenomena in a p-n Junction of Gallium Arsenide
• Deterioration of GaAs Esaki Diodes
• Analysis of a Tunnel Diode
• Deterioration-Induced Slow Trap in GaAs Esaki Diodes
• Distribution Coefficient of Zinc in Gallium Arsenide
• Relaxation in the Deterioration-Induced Second Peak in Gallium Arsenide Esaki Diodes
• Excess and Thermal Currents in Gallium Arsenide Esaki Diodes

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