On the Secondary Tunnelling Phenomena in a p-n Junction of Gallium Arsenide
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1961-06-05
著者
関連論文
- On the Determination of Minority Carrier Lifetime and Surface Recombination Velocity from the Transient Response of MOS Capacitors
- On the Secondary Tunnelling Phenomena in a p-n Junction of Gallium Arsenide
- Deterioration of GaAs Esaki Diodes
- Analysis of a Tunnel Diode
- Deterioration-Induced Slow Trap in GaAs Esaki Diodes
- Distribution Coefficient of Zinc in Gallium Arsenide
- Relaxation in the Deterioration-Induced Second Peak in Gallium Arsenide Esaki Diodes
- Excess and Thermal Currents in Gallium Arsenide Esaki Diodes