Excess and Thermal Currents in Gallium Arsenide Esaki Diodes

スポンサーリンク

概要

• 論文の詳細を見る

• The exponential excess current and the thermal current in GaAs Esaki diodes have been studied in the temperature range 77° to 350°K. The exponential excess current is observable in a typical sample up to bias voltages of 1.2 V and 1.4 V at room and liquid nitrogen temperatures, respectively. The existence of an exponential excess current in such a wide bias range requires an almost uniform distribution of intermediate states throughout the energy gap in the vicinity of a junction. The lattice defects of a high concentration should be responsible for the intermediate states. The thermal current in GaAs Esaki diodes is believed to be a high-injection current but not the usual diffusion current.

• 社団法人応用物理学会の論文
• 1964-11-15

著者

• Shibata Akikazu

  Sony Corporation

関連論文

• On the Determination of Minority Carrier Lifetime and Surface Recombination Velocity from the Transient Response of MOS Capacitors
• On the Secondary Tunnelling Phenomena in a p-n Junction of Gallium Arsenide
• Deterioration of GaAs Esaki Diodes
• Analysis of a Tunnel Diode
• Deterioration-Induced Slow Trap in GaAs Esaki Diodes
• Distribution Coefficient of Zinc in Gallium Arsenide
• Relaxation in the Deterioration-Induced Second Peak in Gallium Arsenide Esaki Diodes
• Excess and Thermal Currents in Gallium Arsenide Esaki Diodes

スポンサーリンク