On the Determination of Minority Carrier Lifetime and Surface Recombination Velocity from the Transient Response of MOS Capacitors

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概要

• 論文の詳細を見る

• A method was developed to measure minority carrier lifetime and surface recombination velocity simultaneously. This method consists of measuring the transient C-V response of several MOS capacitors by application of a step voltage to gate electrodes. Experiment proved that this method was useful in evaluating Si slices.

• 社団法人応用物理学会の論文
• 1972-08-05

著者

• Kano Yasuo

  Sony Corporation Research Center

• SHIBATA Akikazu

  SONY CORPORATION Research Center

• Shibata Akikazu

  Sony Corporation

関連論文

• On the Determination of Minority Carrier Lifetime and Surface Recombination Velocity from the Transient Response of MOS Capacitors
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• Distribution Coefficient of Zinc in Gallium Arsenide
• Relaxation in the Deterioration-Induced Second Peak in Gallium Arsenide Esaki Diodes
• Excess and Thermal Currents in Gallium Arsenide Esaki Diodes

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