Observation of Lattice Defects in Silicon by Scanning Electron Microscopy Utilizing Beam Induced Current Generated in Schottky Barriers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1975-03-05
著者
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Kawado Seiji
Sony Corporation Research Center
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Adachi Tohru
Sony Corporation Research Center
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HAYAFUJI Yoshinori
SONY CORPORATION Research Center
関連論文
- Measurement of Local Lattice Distortion in Silicon by Imaging-Plate Plane-Wave X-Ray Topography with Image Magnification
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- Novel Analysis System of Imaging-Plate Plane-Wave X-Ray Topography for Characterizing Lattice Distortion in Silicon
- Time-Resolved X-Ray Diffraction from a Silicon Crystal Irradiated by a Q-Switched Nd:YAG Laser : Condensed Matter
- Observation of Lattice Defects in Silicon by Scanning Electron Microscopy Utilizing Beam Induced Current Generated in Schottky Barriers
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- Influence of Preoxidation Annealing on Stacking Fault Generation Due to Mechanical Damage on Silicon Surfaces
- Formation of Gallium Nitride at the Interface between Silicon Nitride Encapsulant and Ion Implanted GaAs
- X-Ray Topographic Images of Oxidation-Induced Frank Sessile Dislocation Loops in Thin Silicon
- Structural Change of Oxidation-Induced Frank Sessile Dislocation Loops in Silicon
- Scanning Electron Microscopic Observation of Oxidation-Induced Stacking Faults in Silicon
- X-ray Observation of Conversion of Faulted Loops to Prismatic Loops in Silicon
- Control of Oxidation-Induced Stacking Faults in Silicon by Chlorine Implantation
- The Electronic Structure of One-Dimensional (1-D), 2-D, and 3-D Silicon Clusters
- X-Ray Observation of Magnetic Domain in Mn-Ferrite