Control of Oxidation-Induced Stacking Faults in Silicon by Chlorine Implantation
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-02-05
著者
関連論文
- Measurement of Local Lattice Distortion in Silicon by Imaging-Plate Plane-Wave X-Ray Topography with Image Magnification
- Time-Resolved X-Ray Diffraction Measurement of Silicon Surface during Laser Irradiation under Grazing-Incidence Conditions
- Novel Analysis System of Imaging-Plate Plane-Wave X-Ray Topography for Characterizing Lattice Distortion in Silicon
- Time-Resolved X-Ray Diffraction from a Silicon Crystal Irradiated by a Q-Switched Nd:YAG Laser : Condensed Matter
- Observation of Lattice Defects in Silicon by Scanning Electron Microscopy Utilizing Beam Induced Current Generated in Schottky Barriers
- Transmission Electron Microscopic Observation of Microdefectsin Zn^+ : Implanted GaAs
- Knoop Hardness of Phosphorus-Diffused Silicon Single Crystals
- X-Ray Observation of Dislocations in Mn-Zn Ferrite
- Influence of Preoxidation Annealing on Stacking Fault Generation Due to Mechanical Damage on Silicon Surfaces
- Formation of Gallium Nitride at the Interface between Silicon Nitride Encapsulant and Ion Implanted GaAs
- X-Ray Topographic Images of Oxidation-Induced Frank Sessile Dislocation Loops in Thin Silicon
- Structural Change of Oxidation-Induced Frank Sessile Dislocation Loops in Silicon
- Scanning Electron Microscopic Observation of Oxidation-Induced Stacking Faults in Silicon
- X-ray Observation of Conversion of Faulted Loops to Prismatic Loops in Silicon
- Control of Oxidation-Induced Stacking Faults in Silicon by Chlorine Implantation
- X-Ray Observation of Magnetic Domain in Mn-Ferrite