Effect of Parasitic Resistance on Mobilily in Laser Crystallized LT poly-Si TFTs (第5回日韓台中情報ディスプレイ合同研究会(ASID '99)) -- (TFT Technology for AM LCD)
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概要
- 論文の詳細を見る
Effect of parasitic resistance (Rp) on the mobility in laser-crystallized low-temperature (LT) poly-Si thin film transistors (TFTs) of various channel lengths was investigated. The minimum off current at Vd=10V in these TFTs is scaleable and is about 0. 15 pA/μm. Significant reduction of mobility was observed in short channel devices due to porasitic resistance. Based on our analysis of the Rp requirement for high-performance short-channel LT poly-Si TFTs, to avoid significant degradation in the mobility for the mobility larger than 300 cm^2/Vs, it 's necessary to keep Rp below 200 ohm.
- 社団法人電子情報通信学会の論文
- 1999-03-19
著者
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Lu I-Min
Electronics Research and Service Organization
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Lu I-min
Electronics Research And Service Organization Industrial Technology Research Institute
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Wu Chung-chih
Electronics Research And Service Organization Industrial Technology Research Institute
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Chen Yeong-e
Electronics Research And Service Organization Industrial Technology Research Institute
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Chang Shih-Chang
Electronics Research and Service Organization Industrial Technology Research Institute
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Chang Shin-Chang
Electronics Research and Service Organization Industrial Technology Research Institute
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Chen Yeong-E
Electronic Research & Service Organization:Industrial Technology Research Institute
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- The Crystallization and Hydrogenation Processes of Low Temperature Poly-Si Manufacture
- Effect of Parasitic Resistance on Mobilily in Laser Crystallized LT poly-Si TFTs (第5回日韓台中情報ディスプレイ合同研究会(ASID '99)) -- (TFT Technology for AM LCD)
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