A Light-Shield a-Si TFT with Low Dark-Leakage Currents

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概要

• 論文の詳細を見る

• A light-shield amorphous silicon (a-Si:H) thin film transistor (TFT) with low dark leakage current is developed. The a-Si:H island edge of this TFT is selectively oxidized without affecting the metal/n^+ a-Si:H layer contact quality, and thus the hole current flowing through the parasitic metal/intrinsic a-Si:H contact at that edge can be blocked. Using this technique, the TFT with effective mobility of 0.7 cm^2/Vsec, subthreshold swing of 0.55V/dec, and threshold voltage of 1.5 V can be achieved. In addition, the leakage current of the TFT is as low as 0.5 pA at high negative gate bias of -10V and drain voltage of 10V.

• 社団法人電子情報通信学会の論文
• 1999-03-18

著者

• Chen Y‐e

  Electronic Research & Service Organization:industrial Technology Research Institute

• Chen Jr-Hong

  Electronics Research and Service Organization

• Chen Yeong-e

  Electronics Research And Service Organization Industrial Technology Research Institute

• Tai Ya-Hsiang

  Electronic Research & Service Organization

• Tai Ya-hsiang

  Electronic Research & Service Organization:industrial Technology Research Institute

• Chen Yeong-E

  Electronic Research & Service Organization:Industrial Technology Research Institute

関連論文

• Advanced α-Si TFT Process Integration & Pixel Architecture (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
• Advanced a-Si TFT Process Integration & Pixel Architecture
• Effect of Deposition Temperature of SiNx/a-Si/n+a-Si Films by Monochamber PECVD Processing on a-Si TFT Electrical Characteristics and Stability (第5回日韓台中情報ディスプレイ合同研究会(ASID '99))
• Effect of deposition temperature of SiN_x/a-Si/n+a-Si films by monochamber PECVD processing on a-Si TFT electrical characteristics and stability
• Effect of Parasitic Resistance on Mobilily in Laser Crystallized LT poly-Si TFTs (第5回日韓台中情報ディスプレイ合同研究会(ASID '99)) -- (TFT Technology for AM LCD)
• A Light-Shield a-Si TFT with Low Dark-Leakage Currents (第5回日韓台中情報ディスプレイ合同研究会(ASID '99))
• A Light-Shield a-Si TFT with Low Dark-Leakage Currents
• Study on the Pixel Voltage of TFTLCDs with Optical Measurement (第5回日韓台中情報ディスプレイ合同研究会(ASID '99))
• Study on the Pixel Voltage of TFTLCDs with Optical Measurement

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