Effect of deposition temperature of SiN_x/a-Si/n+a-Si films by monochamber PECVD processing on a-Si TFT electrical characteristics and stability
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概要
- 論文の詳細を見る
Effect of deposition temperature of monochamber PECVD processing on a-Si TFT electrical characteristics and stability has been investigated. The experimental results show that 1) TFTs deposited at 280℃ have higher mobility than the TFTs deposited with other temperature; 2) TFTs deposited with higher temperature have better stability against voltage stressing. When we deposited SiN_x/a-Si/n+a-Si films by monochamber PECVD processing at 280℃, a-Si:H TFTs have higher mobility and better capability against voltage stressing.
- 1999-03-18
著者
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Chen Yeong-e
Electronics Research And Service Organization Industrial Technology Research Institute
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Lin Hui
Electronics Research and Service Organization Industrial Technology Research Institute
関連論文
- Effect of Deposition Temperature of SiNx/a-Si/n+a-Si Films by Monochamber PECVD Processing on a-Si TFT Electrical Characteristics and Stability (第5回日韓台中情報ディスプレイ合同研究会(ASID '99))
- Effect of deposition temperature of SiN_x/a-Si/n+a-Si films by monochamber PECVD processing on a-Si TFT electrical characteristics and stability
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- A Light-Shield a-Si TFT with Low Dark-Leakage Currents