Spectroscopic Analysis in Laser Annealing LT poly-Si TFTs
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概要
- 論文の詳細を見る
We investigated the optic characteristics of XeCl excimer laser annealed (ELA) amorphous silicon in this study. The 50nm PECVD a-Si film was deposited on PECVD oxide with a thickness of 300nm. Then the samples were heated to reduce its hydrogen content and crystallized with a wide range of 308nm XeCl excimer laser energy densities. It was found that the structure and optic characteristics of Poly-Si film is a function of the extent of crystalline of Poly-Si film. For example, in the transmittance spectroscopic range of 420〜610 nm, the transmittance is dependent on the extent of crystalline of Poly-Si film. Therefore we can use these optic characteristics of Poly-Si film to monitor the extent of crystallization of Poly-Si films. Correlations between optic characteristics of laser crystallized Poly-Si, ELA energy density, and surface roughness were discussed to monitor the Poly-Si film quality.
- 社団法人電子情報通信学会の論文
- 1999-03-18
著者
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Wang L‐m
Industrial Technol. Res. Inst. Twn
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Shih Chu-jung
Electronics Research And Service Organization
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Lu I‐m
Industrial Technol. Res. Inst. Twn
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Lu I-Min
Electronics Research and Service Organization
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Wang Li-Ming
Electronics Research and Service Organization Industrial Technology Research Institute
関連論文
- Advanced α-Si TFT Process Integration & Pixel Architecture (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- Advanced a-Si TFT Process Integration & Pixel Architecture
- The Crystallization and Hydrogenation Processes of Low Temperature Poly-Si Manufacture (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- Spectroscopic Analysis in Laser Annealing LT poly-Si TFTs (第5回日韓台中情報ディスプレイ合同研究会(ASID '99))
- Spectroscopic Analysis in Laser Annealing LT poly-Si TFTs
- The Crystallization and Hydrogenation Processes of Low Temperature Poly-Si Manufacture
- Effect of Parasitic Resistance on Mobilily in Laser Crystallized LT poly-Si TFTs (第5回日韓台中情報ディスプレイ合同研究会(ASID '99)) -- (TFT Technology for AM LCD)
- Effect of Excimer Laser Annealing Through Oxide (第5回日韓台中情報ディスプレイ合同研究会(ASID '99))
- Effect of Excimer Laser Annealing Through Oxide