Nano-electronics Technology : Fabrication and characterization of various quantum dot devices
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概要
- 論文の詳細を見る
Fabrication and characterization of various types of semiconductor quantum dot devices are discussed. Details about self-assembled Si quantum dot transistors, self-assembled InAs quantum dot transistors, quantum dot transistors using side-wall formation technique, quantum dot transistors fabricated from a thin layer of n+ GaAs are explained.
- 社団法人電子情報通信学会の論文
- 2002-06-26
著者
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Park B.
School Of Electrical Eng. Seoul National Univ.
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Park B.-g.
School Of Electrical Eng. Seoul National Univ.
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AHN D.
Institute of Quantum Information Processing and Systems, University of Seoul
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Hwang S.w.
Dept. Of Electronic And Computer Engineering Korea University:institute Of Quantum Information Proce
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Hwang S.
Dept. Of Electronic & Computer Eng. Korea Univ.
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Hwang S.w.
Dept. Of Electronic & Computer Eng. Korea Univ.
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Ahn D.
Institute Of Quantum Information Processing And Systems University Of Seoul
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