Observation of gate-bias dependent interface coupling in thin SOI MOSFETs(Session 6A Silicon Devices III,AWAD2006)
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概要
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We have fabricated and characterized a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect-transistor (MOSFET) with the SOI film thickness of 26 nm. The measured data show that the transconductance (g_m) peak in the front gate bias shifts and then splits into two peaks as the back gate voltage decreases. This observation is interpreted as due to a transition between the volume inversion state and the interface state. The ratio of the g_m peak splitting to the change of back gate bias is approximately the same as the capacitive coupling factor between the front and the back interfaces. Our observation is consistent with double layer conduction observed in an earlier SOI quantum dot transistor [1].
- 社団法人電子情報通信学会の論文
- 2006-06-26
著者
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Hwang S
Dept. Of Electronics & Computer Engineering Korea University
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AHN D.
Institute of Quantum Information Processing and Systems, University of Seoul
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Jung Y.
Electronics and Computer Engineering, Korea University
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Cho K.
Electronics and Computer Engineering, Korea University
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Hwang S.
Electronics and Computer Engineering, Korea University
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Cho K.
Electronics And Computer Engineering Korea University
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Ahn D.
Institute Of Quantum Information Processing And Systems University Of Seoul
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