[Invited]Quantum-Dot Semiconductor Optical Amplifiers

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概要

• 論文の詳細を見る

• This paper provides current status and prospects of quantum-dot semiconductor optical amplifiers, based on our pio-neering work covering the proposal of their promising features, the quantum-dot optical device theory, experimental demonstrations, and the design and assembly of all-optical switching modules.

• 社団法人電子情報通信学会の論文
• 2003-12-12

著者

• NAKATA Y.

  Fujitsu Laboratories Ltd.

• AKIYAMA T.

  Fujitsu Laboratories Ltd.

• Ebe H.

  Iis And Rcast The University Of Tokyo

• AKIYAMA T.

  QD Laser Inc.

• ARAKAWA Y.

  IIS and RCAST, The University of Tokyo

• SUGAWARA M.

  Institute of Industrial Science, University of Tokyo

• EBE H.

  Institute of Industrial Science, University of Tokyo

• HATORI N.

  Institute of Industrial Science, University of Tokyo

• ARAKAWA Y.

  Institute of Industrial Science, University of Tokyo

• Otsubo K.

  Fujitsu Ltd.

• Sugawara M.

  Fujitsu Fujitsu Laboratories Ltd.

• Arakawa Y

  Iis And Rcast The University Of Tokyo

• Akiyama T

  Qd Laser Inc.

• Nakata Y.

  Research Center For Advanced Science And Technology University Of Tokyo

• Otsubo K.

  Fujitsu Laboratories Ltd.

• Otsubo K.

  Fujitsu Ltd.:fujitsu Laboratories Ltd.

• Hatori N.

  Institute Of Industrial Science University Of Tokyo

関連論文

• Artificial control of optical gain polarization by stacking quantum dot layers
• Optical Gain of Polarized Emission in InAs Quantum Dots with In_xGa_As Capping Layer
• Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
• Extended wavelength emission to 1.3 μm in nitrided InAs/GaAs self-assembled quantum dots
• MOCVD Growth of Quantum-Dot Optical Devices
• High-Power Broadband Amplification and High-Speed Optical-Signal Processing by Quantum-Dot Semiconductor Optical Amplifiers
• Quantum-Dot Semiconductor Optical Amplifiers
• [Invited]Quantum-Dot Semiconductor Optical Amplifiers
• A Slow Waves Heating Experiment on RFC-XX
• 27pHD-11 Spin-orbit interaction due to wavefunction penetration in low potential-barrier quatnum dots
• Growth Condition Dependence of the Photoluminescence Properties of In_xGa_N/In_yGa_N Multiple Quantum Wells Grown by MOCVD
• Low Threshold and Record High TO (140K) Long Wavelength Strained Quantum Well Lasers on InGaAs Ternary Substrates
• 1.3μm Semiconductor Lasers on InGaAs Ternary Substrates Toward Low-Threshold and Temperature Insensitive Operation
• Strained Double-Quantum-Well Lasers Emitting in 1.2μm Region Grown on In_Ga_As Ternary Substrates
• Direct Observation of Electron Jet from a Point Contact
• Characteristics of Double-Heterostructure Lasers in Strong Magnetic Fields : B-3: NOVEL DEVICES
• Single Electron Transistor Using Single Self-Assembled InAs Quantum Dots
• Magneto-Optical Study of Single InGaAs Quantum Dot

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