MOCVD Growth of Quantum-Dot Optical Devices

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• SUGAWARA M.

  Fujitsu Laboratories Ltd.

• Ebe H.

  Iis And Rcast The University Of Tokyo

• KAWAGUCHI K.

  Fujitsu, Fujitsu Laboratories Ltd.

• YASUOKA N.

  Fujitsu, Fujitsu Laboratories Ltd.

• EKAWA M.

  Fujitsu, Fujitsu Laboratories Ltd.

• AKIYAMA T.

  QD Laser Inc.

• ARAKAWA Y.

  IIS and RCAST, The University of Tokyo

• Sugawara M.

  Fujitsu Fujitsu Laboratories Ltd.

• Ekawa M.

  Fujitsu Fujitsu Laboratories Ltd.

• Arakawa Y

  Iis And Rcast The University Of Tokyo

• Akiyama T

  Qd Laser Inc.

• Kawaguchi K.

  Fujitsu Fujitsu Laboratories Ltd.

• Yasuoka N.

  Fujitsu Fujitsu Laboratories Ltd.

関連論文

• Artificial control of optical gain polarization by stacking quantum dot layers
• Optical Gain of Polarized Emission in InAs Quantum Dots with In_xGa_As Capping Layer
• Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
• Extended wavelength emission to 1.3 μm in nitrided InAs/GaAs self-assembled quantum dots
• MOCVD Growth of Quantum-Dot Optical Devices
• High-Power Broadband Amplification and High-Speed Optical-Signal Processing by Quantum-Dot Semiconductor Optical Amplifiers
• Quantum-Dot Semiconductor Optical Amplifiers
• [Invited]Quantum-Dot Semiconductor Optical Amplifiers
• Tapered Thickness Waveguide Integrated BH MQW Lasers

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