High-Power Broadband Amplification and High-Speed Optical-Signal Processing by Quantum-Dot Semiconductor Optical Amplifiers

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概要

• 論文の詳細を見る
• 2004-09-15

著者

• AKIYAMA T.

  Fujitsu Laboratories Ltd.

• Ebe H.

  Iis And Rcast The University Of Tokyo

• KAWAGUCHI K.

  Fujitsu, Fujitsu Laboratories Ltd.

• EKAWA M.

  Fujitsu, Fujitsu Laboratories Ltd.

• AKIYAMA T.

  QD Laser Inc.

• ARAKAWA Y.

  IIS and RCAST, The University of Tokyo

• SUGAWARA M.

  Institute of Industrial Science, University of Tokyo

• EBE H.

  Institute of Industrial Science, University of Tokyo

• HATORI N.

  Institute of Industrial Science, University of Tokyo

• SUDO H.

  Fujitsu Ltd. and Fujitsu Laboratories Ltd.

• KURAMATA A.

  Fujitsu Ltd. and Fujitsu Laboratories Ltd.

• ARAKAWA Y.

  Institute of Industrial Science, University of Tokyo

• Sugawara M.

  Fujitsu Fujitsu Laboratories Ltd.

• Ekawa M.

  Fujitsu Fujitsu Laboratories Ltd.

• Arakawa Y

  Iis And Rcast The University Of Tokyo

• Akiyama T

  Qd Laser Inc.

• Kawaguchi K.

  Fujitsu Fujitsu Laboratories Ltd.

• Hatori N.

  Institute Of Industrial Science University Of Tokyo

関連論文

• Artificial control of optical gain polarization by stacking quantum dot layers
• Optical Gain of Polarized Emission in InAs Quantum Dots with In_xGa_As Capping Layer
• Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
• Extended wavelength emission to 1.3 μm in nitrided InAs/GaAs self-assembled quantum dots
• MOCVD Growth of Quantum-Dot Optical Devices
• High-Power Broadband Amplification and High-Speed Optical-Signal Processing by Quantum-Dot Semiconductor Optical Amplifiers
• Quantum-Dot Semiconductor Optical Amplifiers
• [Invited]Quantum-Dot Semiconductor Optical Amplifiers
• A Slow Waves Heating Experiment on RFC-XX
• 27pHD-11 Spin-orbit interaction due to wavefunction penetration in low potential-barrier quatnum dots
• Growth Condition Dependence of the Photoluminescence Properties of In_xGa_N/In_yGa_N Multiple Quantum Wells Grown by MOCVD
• Direct Observation of Electron Jet from a Point Contact
• Characteristics of Double-Heterostructure Lasers in Strong Magnetic Fields : B-3: NOVEL DEVICES
• Tapered Thickness Waveguide Integrated BH MQW Lasers
• Single Electron Transistor Using Single Self-Assembled InAs Quantum Dots
• Magneto-Optical Study of Single InGaAs Quantum Dot

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