Growth Condition Dependence of the Photoluminescence Properties of In_xGa_<1-x>N/In_yGa_<1-y>N Multiple Quantum Wells Grown by MOCVD

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概要

• 論文の詳細を見る
• 1998-09-07

著者

• ARAKAWA Y.

  Institute of Industrial Science, University of Tokyo

• Someya T.

  Institute Of Industrial Science

• HARRIS J.

  Institute of Industrial Science

• BRISSET H.

  Institute of Industrial Science

関連論文

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• Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD
• Growth Condition Dependence of the Photoluminescence Properties of In_xGa_N/In_yGa_N Multiple Quantum Wells Grown by MOCVD
• Direct Observation of Electron Jet from a Point Contact
• Characteristics of Double-Heterostructure Lasers in Strong Magnetic Fields : B-3: NOVEL DEVICES
• Single Electron Transistor Using Single Self-Assembled InAs Quantum Dots
• Magneto-Optical Study of Single InGaAs Quantum Dot

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