Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD
スポンサーリンク
概要
- 論文の詳細を見る
- 1999-09-20
著者
-
ARAKAWA Y.
Research Center for Advanced Science and Technology, University of Tokyo
-
TATEBAYASHI J.
Research Center for Advanced Science and Technology, University of Tokyo
-
Someya T.
Institute Of Industrial Science University Of Tokyo
-
ISHIDA S.
Research Center for Advanced Science and Technology, University of Tokyo
-
NISHIOKA M.
Institute of Industrial Science, University of Tokyo
-
Someya T.
Institute Of Industrial Science
-
Arakawa Y.
Research Center For Advanced Science And Technology And Institute Of Industrial Science University O
-
Tatebayashi J.
Research Center For Advanced Science And Technology University Of Tokyo
-
Nishioka M.
Institute Of Industrial Science And Institute For Solid State Physics University Of Tokyo
関連論文
- Optical Gain of Polarized Emission in InAs Quantum Dots with In_xGa_As Capping Layer
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
- Influence of the Ferroelectric Polarization on the Properties of the Two-Dimensional Electron Gas in Pb(Zr_Ti_)O_3/Al_xGa_N/GaN Structures
- Investigation of the Polarization-Induced Charges in Modulation-Doped Al_x- Ga_N/ GaN Heterostructures through Capacitance-Voltage Profiling and Simulation
- Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD
- Growth Condition Dependence of the Photoluminescence Properties of In_xGa_N/In_yGa_N Multiple Quantum Wells Grown by MOCVD
- Characteristics of Double-Heterostructure Lasers in Strong Magnetic Fields : B-3: NOVEL DEVICES
- Single Electron Transistor Using Single Self-Assembled InAs Quantum Dots
- Magneto-Optical Study of Single InGaAs Quantum Dot