Investigation of the Polarization-Induced Charges in Modulation-Doped Al_x- Ga_<1-x>N/ GaN Heterostructures through Capacitance-Voltage Profiling and Simulation

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概要

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2001-09-25

著者

ARAKAWA Y.
Research Center for Advanced Science and Technology, University of Tokyo
SHEN B.
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University
ZHANG R.
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University
ZHOU Y.
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University
ZHENG Y.
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University
SOMEYA T.
Research Center for Advanced Science and Technology and Institute of Industrial Science, University
Shen B.
Jiangsu Provincial Key Laboratory Of Photonic And Electronic Materials Science And Technology And Na
Zheng Y.
Jiangsu Provincial Key Laboratory Of Photonic And Electronic Materials Science And Technology And Na
YU H.
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University
Zhang R.
Jiangsu Provincial Key Laboratory Of Photonic And Electronic Materials Science And Technology And Na
Someya T.
Research Center For Advanced Science And Technology And Institute Of Industrial Science University O
Arakawa Y.
Research Center For Advanced Science And Technology And Institute Of Industrial Science University O
Zhou Y.
National Laboratory Of Solid State Microstructures And Department Of Physics Nanjing University

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