Yellow Luminescence in Gallium Nitride Induced by Intentional Impurity Incorporation During Halide Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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ZHANG R.
Department of Geological and Environmental Sciences, Stanford University
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ZHANG L.
Department of Physics, University of California
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ZHENG Y.
Department of Orthopedic Surgery, SUNY Upstate Medical University
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Shen B.
Jiangsu Provincial Key Laboratory Of Photonic And Electronic Materials Science And Technology And Na
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Zheng Y.
Jiangsu Provincial Key Laboratory Of Photonic And Electronic Materials Science And Technology And Na
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SHI Y.
Department of Physics & National Laboratory of Solid State Microstructures, Nanjing University
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SHEN B.
Department of Physics & National Laboratory of Solid State Microstructures, Nanjing University
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GU S.
Department of Physics & National Laboratory of Solid State Microstructures, Nanjing University
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Gu S.
Department Of Physics Nanjing University
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KUECH T.
Department of Chemical Engineering, University of Wisconsin
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Kuech T.
Department Of Chemical Engineering University Of Wisconsin
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Shi Y.
Department Of Physics Nanjing University
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Zhang R.
Jiangsu Provincial Key Laboratory Of Photonic And Electronic Materials Science And Technology And Na
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Zheng Y.
Department Of Orthopedic Surgery Suny Upstate Medical University
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Zhang R.
Department Of Geological And Environmental Sciences Stanford University
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Zhang L.
Department Of Oral And Maxillofacial Surgery Shimane Medical University
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SHI Y.
Department of Molecular Genetics, Microbiology and Immunology, Robert Wood Johnson Medical School, University of Medicine and Dentistry of New Jersey
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