Gu S. | Department Of Physics Nanjing University
スポンサーリンク
概要
関連著者
-
ZHANG R.
Department of Geological and Environmental Sciences, Stanford University
-
ZHENG Y.
Department of Orthopedic Surgery, SUNY Upstate Medical University
-
Shen B.
Jiangsu Provincial Key Laboratory Of Photonic And Electronic Materials Science And Technology And Na
-
Zheng Y.
Jiangsu Provincial Key Laboratory Of Photonic And Electronic Materials Science And Technology And Na
-
SHI Y.
Department of Physics & National Laboratory of Solid State Microstructures, Nanjing University
-
SHEN B.
Department of Physics & National Laboratory of Solid State Microstructures, Nanjing University
-
GU S.
Department of Physics & National Laboratory of Solid State Microstructures, Nanjing University
-
Gu S.
Department Of Physics Nanjing University
-
Shi Y.
Department Of Physics Nanjing University
-
Zhang R.
Jiangsu Provincial Key Laboratory Of Photonic And Electronic Materials Science And Technology And Na
-
Zheng Y.
Department Of Orthopedic Surgery Suny Upstate Medical University
-
Zhang R.
Department Of Geological And Environmental Sciences Stanford University
-
SHI Y.
Department of Molecular Genetics, Microbiology and Immunology, Robert Wood Johnson Medical School, University of Medicine and Dentistry of New Jersey
-
ZHANG L.
Department of Physics, University of California
-
Bu H.
Department Of Physics & National Laboratory Of Solid State Microstructures Nanjing University
-
YUAN X.
Department of Physics & National Laboratory of Solid State Microstructures, Nanjing University
-
HAN P.
Department of Physics & National Laboratory of Solid State Microstructures, Nanjing University
-
KUECH T.
Department of Chemical Engineering, University of Wisconsin
-
Kuech T.
Department Of Chemical Engineering University Of Wisconsin
-
Zhang L.
Department Of Oral And Maxillofacial Surgery Shimane Medical University
著作論文
- Investigation on Switching Kinetics of Interface Traps Through MOSFETs with Ultra Narrow Channels
- Yellow Luminescence in Gallium Nitride Induced by Intentional Impurity Incorporation During Halide Vapor Phase Epitaxy