Extended wavelength emission to 1.3 μm in nitrided InAs/GaAs self-assembled quantum dots

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概要

• 論文の詳細を見る
• American Institute of Physics (AIP)の論文

著者

• Wada O.

  Venture Business Laboratory Faculty Of Engineering Kobe University

• Kita T.

  Venture Business Laboratory Faculty Of Engineering Kobe University

• Ebe H.

  Iis And Rcast The University Of Tokyo

• Sugawara M.

  Fujitsu Fujitsu Laboratories Ltd.

• Arakawa Y

  Iis And Rcast The University Of Tokyo

• Nakata Y.

  Research Center For Advanced Science And Technology University Of Tokyo

関連論文

• Artificial control of optical gain polarization by stacking quantum dot layers
• Optical Gain of Polarized Emission in InAs Quantum Dots with In_xGa_As Capping Layer
• Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
• Extended wavelength emission to 1.3 μm in nitrided InAs/GaAs self-assembled quantum dots
• MOCVD Growth of Quantum-Dot Optical Devices
• High-Power Broadband Amplification and High-Speed Optical-Signal Processing by Quantum-Dot Semiconductor Optical Amplifiers
• Quantum-Dot Semiconductor Optical Amplifiers
• [Invited]Quantum-Dot Semiconductor Optical Amplifiers

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