Strained Double-Quantum-Well Lasers Emitting in 1.2μm Region Grown on In_<0.21>Ga_<0.79>As Ternary Substrates

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概要

• 論文の詳細を見る
• 1996-08-26

著者

• SUZUKI T.

  FUJITSU LTD.

• Otsubo K.

  Fujitsu Ltd.

• Kusunoki T.

  Fujitsu Laboratories Ltd.

• SHOJI H.

  Fujitsu Laboratories Ltd.

• UCHIDA T.

  Fujitsu Laboratories Ltd.

• ISHIKAWA H.

  Fujitsu Laboratories Ltd.

• Otsubo K.

  Fujitsu Laboratories Ltd.

関連論文

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• 1.3μm Semiconductor Lasers on InGaAs Ternary Substrates Toward Low-Threshold and Temperature Insensitive Operation
• Strained Double-Quantum-Well Lasers Emitting in 1.2μm Region Grown on In_Ga_As Ternary Substrates
• Variable Wavelength Shifter Using Four-Wave Mixing in a Wavelength Selectable Laser
• Noise Figure Characteristics of Wavelength Conversion Using FWM in an SOA Integrated DFB Laser

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