Improvements of Crystal Orientations of Wurtzite-Type GaN Thin Films Grown on Metal Surfaces(<Special Issue>Recent Development of Electro-Mechanical Devices (IS-EMD 2002))

概要

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Gallium nitride (GaN) is one of the wurtzitetype materials and has semiconducting properties. Crystallinities of GaN thin films are usually poor when they are directly grown on polycrystalline metal-foils which are expected as substrates for realizing novel giant microelectronic devices. Improvements of crystal orientations of GaN thin films grown on such polycrystalline metal-foils are tried by using several kinds of intermediate layers. Aluminum nitride (AlN), GaN, silicon dioxide (SiO_2) and Si are chosen as materials for the intermediate layers. The crystal orientations of GaN thin films grown by inserting the SiO_2 and Si intermediate layers with adequate thicknesses are markedly improved, while those grown on the A1N or GaN intermediate layers are not improved. These differences are not caused by the kinds of the materials used for the intermediate layers but by differences in their crystallinities.
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2003-06-01