Effect of Synthetic Impurities on Photocarrier Transport in Poly(3-Hexylthiophene) (Special Issue on Organic Molecular Electronics for the 21st Century)
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概要
- 論文の詳細を見る
Photocarrier transport of regiorandom poly(3-hexylthiophene) P3HT in ITO / P3HT / Al sandwich cell configuration has been investigated by means of Time-of-Flight technique. Characteristics of Schottky diode and the magnitude of hole mobility have been found to be affected by impurities involved during the synthesis. The hole mobility in regiorandom P3HT at room temperature has been estimated to be 2.4×10^<-5>and 2.6×10^<-4>cm^2 / V.s before and after the removal of ferric ions, respectively, at a field of 5.0×10^5V / cm. Field dependencies of mobility before and after purification show unique feature and have been discussed in terms of the disorder model.
- 社団法人電子情報通信学会の論文
- 2000-07-25
著者
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PANDEY Shyam
Graduate School of Life Sciences and Systems Engineering, Kyushu Institute of Technology
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PANDEY Shyam
Fukuoka Industry Science and Technology Foundation
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NAGAMATSU Shuichi
the Department of Computer Science and Electronics, Kyushu Institute of Technology
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TAKASHIMA Wataru
the Department of Computer Science and Electronics, Kyushu Institute of Technology
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KANETO Keiichi
the Department of Computer Science and Electronics, Kyushu Institute of Technology
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Kaneto K
Faculty Of Engineering Osaka University
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Kaneto Keiichi
The Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Pandey Shyam
Graduate School Of Life Sciences And Systems Engineering Kyushu Institute Of Technology
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Nagamatsu Shuichi
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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