Multiple-Valued Logic-in-Memory VLSI Architecture Based on Floating-Gate-MOS Pass-Transistor Logic (Special Issue on Integrated Electronics and New System Paradigms)

概要

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A new logic-in-memory VLSI architecture based on multiple-valued floating-gate-MOS pass-transistor logic is proposed to solve the communication bottleneck between memory and logic modules. Multiple-valued stored data are represented by the threshold voltage of a floating-gate MOS transistor, so that a single floating-gate MOS transistor is effectively employed to merge multiple-valued threshold-literal and pass-switch functions. As an application, a four-valued logicin-memory VLSI for high-speed pattern recognition is also presented. The proposed VLSI detects a stored reference word with the minimum Manhattan distance between a 16-bit input word and 16-bit stored reference words. The effective chip area, the switching delay and the power dissipation of a new four-valued full adder, which is a key component of the proposed logic-in-memory VLSI, are reduced to about 33 percent, 67 percent and 24 percent, respectively, in comparison with those of the corresponding binary CMOS implementation under a 0.5-μm flash EEPROM, technology.
社団法人電子情報通信学会の論文
1999-09-25