Lateral IGBT Structure on the SOI Film with the Collector-Short Region for Improved Blocking Capability

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概要

• 論文の詳細を見る

• This letter describes the collector-short technique for improving the blocking capability of the lateral IGBT (LIGBT) on the SOI film. The concept of our proposed technique is to prevent the injection of the minority carrier from the collector region to the high electric field area. This can be done by replacing the p^+-collector layer at the sharp corner of the collector region, where the potential distribution in the device is subject to the diffusion curvature effect of the n-buffer layer, with the n^+-collector-short layer. By only introducing the collector-short region to the sharp corner of the collector region, an increase of about 40 V in the breakdown voltage over the LIGBT without the collector-short region can be achieved.

• 社団法人電子情報通信学会の論文
• 1996-04-25

著者

• Sumida Hitoshi

  Fuji Electric Co. Ltd.

• Sumida H

  Fuji Electric Co. Ltd. Nagano Jpn

• Sumida Hitoshi

  Advanced Device Technology Laboratory Fuji Electric Corporate Research & Development Ltd.

• HIRABAYASHI Atsuo

  Advanced Device Technology Laboratory, Fuji Electric Corporate Research & Development Ltd.

• Sumida Hitoshi

  Advanced Device Technology Laboratory Fuji Electric Corporate R Amp Ltd.

• Hirabayashi Atsuo

  Fuji Electric Co. Ltd.

• Hirabayashi Atsuo

  Advanced Device Technology Laboratory Fuji Electric Corporate R Amp Ltd.

関連論文

• Measurements of the Breakdown Voltage of the Lateral Insulated Gate Bipolar Transistor on the Silicon-on-Insulator Film with Varying Implantation Doses for the N-Buffer Layer
• SOI LIGBT Structure with the Collector-Short Region for Improved Latch-Up Performance
• Investigation of Transient Substrate Currents in Lateral Power Devices on Silicon-on-Insulator
• Noise Current Induced by Switching of a Dielectric Isolated Lateral Insulated Gate Bipolar Transistor on Silicon-on-Insulator
• A Lateral Insulated Gate Bipolar Transistor Structure with the Collector-Short Region for Improved Latch-Up Performance
• Long-Term Reliability of the Blocking Capability and Failure Voltage of Electrostatic Discharge of the SOI High-Voltage Device and IC
• Long-Term Reliability of the Blocking Capability and Failure Voltage of Electrostatic Discharge(ESD) of SOI High-Voltage Device and IC
• Measurement of the Breakdown Voltage of Lateral Power Metal-Oxide-Semiconductor Field-Effect-Transistors on a Silicon-on-Insulator Film with Varying the Surface Design around the Gate Region
• Lateral IGBT Structure on the SOI Film with the Collector-Short Region for Improved Blocking Capability

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