Measurement of the Breakdown Voltage of Lateral Power Metal-Oxide-Semiconductor Field-Effect-Transistors on a Silicon-on-Insulator Film with Varying the Surface Design around the Gate Region
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-09-15
著者
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Sumida Hitoshi
Advanced Device Technology Laboratory Fuji Electric Corporate Research & Development Ltd.
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HIRABAYASHI Atsuo
Advanced Device Technology Laboratory, Fuji Electric Corporate Research & Development Ltd.
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Sumida Hitoshi
Advanced Device Technology Laboratory Fuji Electric Corporate R Amp Ltd.
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Hirabayashi Atsuo
Advanced Device Technology Laboratory Fuji Electric Corporate R Amp Ltd.
関連論文
- Measurements of the Breakdown Voltage of the Lateral Insulated Gate Bipolar Transistor on the Silicon-on-Insulator Film with Varying Implantation Doses for the N-Buffer Layer
- SOI LIGBT Structure with the Collector-Short Region for Improved Latch-Up Performance
- Investigation of Transient Substrate Currents in Lateral Power Devices on Silicon-on-Insulator
- Noise Current Induced by Switching of a Dielectric Isolated Lateral Insulated Gate Bipolar Transistor on Silicon-on-Insulator
- A Lateral Insulated Gate Bipolar Transistor Structure with the Collector-Short Region for Improved Latch-Up Performance
- Long-Term Reliability of the Blocking Capability and Failure Voltage of Electrostatic Discharge of the SOI High-Voltage Device and IC
- Long-Term Reliability of the Blocking Capability and Failure Voltage of Electrostatic Discharge(ESD) of SOI High-Voltage Device and IC
- Measurement of the Breakdown Voltage of Lateral Power Metal-Oxide-Semiconductor Field-Effect-Transistors on a Silicon-on-Insulator Film with Varying the Surface Design around the Gate Region
- Lateral IGBT Structure on the SOI Film with the Collector-Short Region for Improved Blocking Capability