X線光電子スペクトルによる材料表面の化学状態解析に関する研究

概要

論文の詳細を見る
Analysis of chemical bonding states of material surfaces was made by measuring the spectrum in X-ray photoelectron spectroscopy (XPS). First, a diamond film, which was prepared by the CVD method, was characterized by measuring the FWHM (full width at half maximum) and the line shape of C1s spectrum. The C1s peak line shape was similar to that of amorphous carbon containing C-H bonds. Second, the peak line shape of polybutadiene (PBD) composed of three isomers, 45% vinyl and 55% trans 1,4 cis 1,4,was analyzed by using an analytical function (Gauss/Lorentzian mixed function), and the peak was separated into five components. The isomer content was studied and the β-chemical shift due to the intermolecular interaction was observed. Third, a simple Ar neutral beam gun capable of providing low-energy Ar atoms was developed for depth profile analysis. The bombardment process for the Si(100) wafer was essentially the same for the Ar ion beam and the Ar neutral beam. However, it was observed that radiation damage to the polyethylene terephthalate (PET) film surface and reduction of the Cu oxide by the neutral beam was remarkably diminished as compared with that by the ion etching method. It is expected that the analysis of the line shape of the core spectrum, the curve fitting of the spectrum and the neutral beam sputter etching method are useful for chemical bonding state analysis in XPS.
社団法人日本分析化学会の論文
1995-08-05