電子線マイクロアナライザーによるガウス分布型発生関数モデルを用いた下地を有する合金薄膜の分析
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Quantitative electron microprobe analyses of thin films of Mn-Bi and Co-Pt alloys on SiO_2 substrates based on Gaussian ionization distribution models, were carried out. The used Gaussian models were the Wittry model and a normalized ionization distribution model proposed by the author. The resulting concentrations of Mn in Mn-Bi and Co in Co-Pt films and their thickness were compared with those by Rutherford backscattering (RBS) and Monte Carlo methods for electron microprobe analysis. The root mean square (RMS) differences of the analytical results of concentrations for thin films to the RBS results were 11.3% for the Wittry model and 4.6% for the normalized ionization distribution model. The RMS differences between the analytical results regarding the thickness of the thin films were 4.2% for the Wittry model and 7.9% for the normalized ionization distribution model. The RMS differences of the Monte Carlo method to the RBS method was 3.5% for the composition and 11.7% for the thickness. The resulting values for the composition by the normalized ionization distribution model were as good as those by Monte Carlo methods. In analyses of the thin film thickness, the Gaussiantype ionization model gave better results than the Monte Carlo method did. Therefore, the Gaussian-type normalized ionization distribution model can be applied to practical analyses of the composition and thickness of thin films on substrates.
- 社団法人日本分析化学会の論文
- 1991-12-05
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- 電子線マイクロアナライザーによるガウス分布型発生関数モデルを用いた下地を有する合金薄膜の分析