Characterization of the Barrier Layer in Al_<1-x>Co_x/{Al_<1-x>Co_x-Oxide}/Al Tunnel Junctions

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Oxides of Al_<1-x>Co_x(x=0, 0. 25, 0. 50, 0. 75, and 1. 0) alloys were chosen as barrier materials in this work. The tunnel junctions consisted of a bottom electrode Al_<1-x>Co_x and a top electrode Al with an insulating layer{Al_<1-x>Co_x-oxide}formed by natural oxidation in a baking-box at 333 K. The oxidation time for forming an Al_<1-x>Co_x-oxide layer on the surface of the bottom Al_<1-x>Co_x layers was optimized. When tunnel resistances were between 10^5 and 10^7 Ωμm^2 measured at 1mV and at 4. 2 K, the effective barrier height and width of the insulating layers of Al_<1-x>Co_x-oxide(x=0. 25, 0. 5, and 0. 75) varied between 0. 7 and 2. 2 eV and between 1. 4 and 1. 7 nm, respectively. It is shown that the thin oxide layer of Al_<1-x>Co_x alloys can be used as a barrier.
社団法人日本磁気学会の論文
2000-04-15