Thickness and Oxidation Time Dependence of Tunnel Magnetoresistance in Ni-Fe/Co/Al-O/Co Junctions

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概要

• 論文の詳細を見る

• Ni-Fe/Co/Al-O/Co tunnel junctions with small active areas down to 3x3 μm^2 were fabricated by the micro-fabrication technique. The Al-O insulating layer was prepared by plasma oxidation of a thin sputtered Al film. The dependences of the tunnel magnetoresistance on the thickness of the Al film and the oxidation time were investigated. The interface structure of the junction was observed by using high-resolution electron microscopy. The relationship between the magnetoresistive properties and the interface structure is discussed.

• 社団法人日本磁気学会の論文
• 2000-04-15

著者

• Miyazaki T.

  Department of Applied Physics, Tohoku University

• Kamijyo M.

  Department Of Biology Faculty Of Science Toyama University

• Kamijo M.

  Department Of Applied Physics Graduate School Of Engineering Tohoku University

• Miyazaki T.

  Department Of Applied Physics Graduate School Of Engineering Tohoku University

• KUBOTA H.

  Department of Applied Physics, Graduate school of engineering Tohoku University

• ANDO Y.

  Department of Applied Physics, Graduate school of engineering Tohoku University

• Otsuka S.

  Department of Applied Physics, Graduate School of Engineering, Tohoku University

• Tezuka N.

  Department of Applied Physics, Graduate School of Engineering, Tohoku University

• Yu C.C.

  Department of Materials, University of Oxford

• Yu C.c.

  Department Of Materials University Of Oxford

• Tezuka N.

  Department Of Applied Physics Graduate School Of Engineering Tohoku University

• Ando Y

  Tohoku University Dept. Of Applied Physics

• ANDO Y.

  Graduate School of Engineering, Tohoku University

• Ando Y

  Department Of Crystalline Materials Science Nagoya University

• Miyazaki T

  Tohoku University Dept. Of Applied Physics

• Kubota H.

  Tohoku University Dept. Of Applied Physics

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