Magnetoresistance of Single and Double Tunnel Junctions Formed by Direct Sputtering Using Al_2O_3 Target

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概要

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• Tunnel magnetoresistance (TMR) has been investigated in single (Ni-Fe/Al_2O_3/Co) and double (Ni-Fe/Al_2O_3/Co/Al_2O_3/Co) tunnel junctions. The Al_2O_3 layer was formed by a direct sputtering method with an Al_2O_3 target. Metal masks were used to form a cross pattern geometry. In the single junctions the dependence of the tunnel resistance and the TMR ratio on the Al_2O_3 thickness was investigated. The tunnel resistance increased exponentially with increasing the Al_2O_3 thickness. A maximum TMR ratio was 4-5%. In the double junctions the dependence of the tunnel resistance and the TMR ratio on the thickness of central Co layer was investigated. The tunnel resistance decreased with increasing the Co thickness. The maximum TMR ratio was 2%, which was smaller than the value of the single junctions.

• 社団法人日本磁気学会の論文
• 1999-01-20

著者

• Miyazaki T.

  Department Of Applied Physics Graduate School Of Engineering Tohoku University

• KUBOTA H.

  Department of Applied Physics, Graduate school of engineering Tohoku University

• Watabe T.

  Department Of Applied Physics Graduate School Of Engineering Tohoku University

• Fukumoto Y.

  Department of Applied Physics, Graduate School of Engineering, Tohoku University

• Kubota H.

  Tohoku University Dept. Of Applied Physics

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