Analysis of Interlayer in Al/Al_2O_3/Co/Al Junctions by Inelastic-Electron-Tunneling-Spectroscopy
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概要
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Inelastic-Electron-Tunneling-Spectroscopy (IETS) has been applied to investigate the electron states of the interface of Al/Al_2O_3/Co(d_<co>)/Al tunneling junctions. A zero-bias anomaly was observed in the conductance curve of the junction with d_<co> of 2Å and decreased with increasing d_<co>. The IET spectra of these junctions showed a strong negative peak at 4 mV, corresponding to the zero-bias anomaly, while the another broad peak was observed for the junctions with d_<co> ≧ 10Å.The peak was different in the position from that assigned to the Al-O LO phonon mode observed for Al/Al_2O_3/Al junction. From the magnetization measurement, it is confirmed that the ferromagnetic layer was formed for the junction with d_<co> ≧ 10Å. These results were discussed with the paramagnetic impurity and magnon assisted tunneling process.
- 社団法人日本磁気学会の論文
- 1999-01-20
著者
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Miyazaki T.
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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MURAI J.
Department of Applied Physics, Graduate school of engineering Tohoku University
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ANDO Y.
Department of Applied Physics, Graduate school of engineering Tohoku University
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Ando Y
Tohoku University Dept. Of Applied Physics
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ANDO Y.
Graduate School of Engineering, Tohoku University
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Ando Y
Department Of Crystalline Materials Science Nagoya University
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Miyazaki T
Tohoku University Dept. Of Applied Physics
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Murai J.
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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