反応性ガス蒸発法によるIIIa, IVa, VaおよびVIa属の窒化物超微粒子の生成(<小特集>粉体小特集)

概要

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Preparation of ultrafine nitride particles has been performed using the reactive gas evaporation technique with electron beam heating. By evaporating metals of group IIIa, IVa, Va and VIa in an atmosphere of N_2 or NH_3 gas at about 1 Torr, nine kinds of crystalline nitride particles, i.e. AlN, TiN, ZrN, HfN, VN, NbN, CrN, Mo_2N and W_2N, were produced. These particles were studied by means of electron microscopy and X-ray diffraction method. All the nitride particles were found to have a particle size smaller than 10nm, and were confirmed to be a single phase with the ordinary crystal structure : Wurtzite-type for AlN, NaCl-type for TiN, ZrN, HfN, VN, NbN and CrN, and partially disordered NaCl-type for Mo_2N and W_2N. The crucible-less evaporation method, which is free from impurities caused by a crucible damage, can be adoped for the most metals of group IVa, Va and VIa.
社団法人日本材料学会の論文
1983-09-15