Na_<1+3x>Zr_2(P_<1-x>Ge_xO_4)_3系の電気伝導度

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The effect of substitution of Ge for Si in the system Na_<1+3x> Zr_2(P_<1-x>Si_xO_4)_3 on the phase and electrical conductivity was investigated. The compositions x=0.17 and 1.0 gave rhombohedral structure below 1100℃, with the shifts of X-ray diffraction lines to lower diffraction angles as compared with NaZr_2P_3O_<12> and Na_4Zr_2Si_3O_<12>, respectively. However, a difference in the diffraction patterns of Na_3Zr_2PGe_2O_<12> and NASICON (Na_3Zr_2PSi_2O_<12>) was recognized. Arrhenius plots of σT for Na_3Zr_2PGe_2O_<12> sintered at 1000°-1090℃ broke in two straight lines indicating activation energies of 8.3-9.2 and 13.4-14.2 kcal/mol in high (500°-320℃) and low (320°-230℃) temperature regions respectively. The system Na_<1+3x>Zr_2(P_<1-x>Ge_xO_4)_3 showed lower electrical conductivity and higher activation energy than the system Na_<1+3x>Zr_2(P_<1-x>Si_xO_4)_3.
社団法人日本セラミックス協会の論文
1988-05-01