SiCセラミックスにおける微小電極を用いた結晶粒内,粒界V-I特性の測定

概要

論文の詳細を見る
The process and technique for direct measurement of current voltage characteristics of a single grain boundary and a grain in silicon carbide ceramics containing beryllia were discussed. Discharging between two tips of aluminum micro-pattern electrodes by applying pulsed voltage caused melting of the tips of electrodes. As the results, aluminum-rich alloy layers were formed along the discharge path and also at the tip section of micro-pattern electrodes resulting in the breakdown of the Schottky barriers and the formation of the ohmic contacts at the interfaces of SiC and electrodes. The formation of the ohmic contacts made it possible to measure the current-voltage characteristics of a grain and a grain boundary directly.
社団法人日本セラミックス協会の論文
1988-11-01