BoO添加SiC焼結体における電気絶縁性のキャリア濃度依存性

概要

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The effects of carrier concentration on the electrical resistivity and electrical barrier height at grain boundaries in SiC ceramics with BeO addition are described. The carrier concentration of the SiC ceramics was controlled by the doping of nitrogen of Si_3N_4 as a donor or aluminum of Al_2O_3 as an acceptor. The barrier height and the electrical resistivity of the SiC ceramics with grains of p-type conduction are higher than those with grains of n-type conduction by-0.3-0.6 e V in the barrier height and the factor of 10-10^5 in the electrical resistivity. In p-type conduction, the barrie-height and the electrical resistivity decrease steeply at the carrier concentration above 〜10^<18> cm^<-3>in SiC grains. These phenomena are explained by the filling of trapping levels in the grain boundaries with the carriers with increase of the carrier concentration in the SiC grams.
社団法人日本セラミックス協会の論文
1989-07-01