ゾル-ゲル法による二酸化セリウム薄膜の作製と電気的バッファ層としての特性

概要

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CeO_2 thin films were prepared on Si(100)and Si(111)substrates from cerium acetate monohydrate via sol-gel process. The thin films were crystallized at approximately 700℃ and had polycrystalline microstructure. Scanning electron microscopy(SEM) observation showed that those films consisted of small grains of 60-70 nm in diameter and had even surfaces. SrTiO_3 films with a platinum top electrode were formed on Pt/Si and Pt/CeO_2/Si substrates. Current voltage(I-V)characteristics of the SrTiO_3 films were measured on Pt/SrTiO_3/Pt/Si and Pt/SrTiO_3/Pt/CeO_2/Si structures. The leakage current density for the former sample was approximately 6.6 × 10^<-6> A/cm^2 under the applied electric field of 9.4 × 10^4 V/cm. An increase in the applied electric field above 9.4 × 10^4 V/cm resulted in a marked increase in the leakage current. The leakage current for the latter sample was 4.1 × 10^<-6> A/cm^2 under 2.5 × 10^5 V/cm. The I-V characteristics of the SrTiO_3 films were improved by the use of the CeO_2 film as an intermediate layer.
社団法人日本セラミックス協会の論文
1999-03-01