ガス圧焼結によるYb_4Si_2O_7N_2結晶相を有する窒化ケイ素の作製

概要

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Silicon nitride containing Yb_2O_3 as a sintering additive was gas-pressure sintered. A dilatometric study indicates that the liquid formation temperature of this additive is higher than that of commonly used additives. The material containing 3.6 mol% of additive densifted up to 99% of the theoretical density by sintering at 1950℃ for 4 h. The grain boundary phase of this material crystallized as Yb_4Si_2O_7N_2. The bending strength of this material was 460 MPa at room temperature. This value is rather low because of voids formed during gas pressure sintering in the specimens. However, strength degradation at high temperature was limited because of the highly refractory Yb_4Si_2O_7N_2 grain boundary phase.
社団法人日本セラミックス協会の論文
2001-05-01