Interaction between a Vacancy and an Si, Ge or Sn Atom in Al-1Owt%Zn Alloys

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概要

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• The changes of resistivity during isothermal aging after quenching were measured in Al-10wt%Zn-0.10wt%Si, Al-10wt%Zn-0.12wt%Ge and Al-10wt%Zn-0.01wt%Sn ternary alloys and the interactions between a vacancy and an Si: Ge or Sn atom were studied. General features of clustering in these alloys were not different from those in Al-10wt%Zn binary alloy. Therefore, the binding energy could be obtained by taking ratio of time, t_<MT>, to reach the maximum of resistivity in ternary alloys with that time, t_<Mb>, in binary alloy. Binding energies between a vacancy and an Si, Ge or Sn atom were deduced to be about B_1+0.10, B_1+0.15 and B_1+0.25 eV, respectively, where B_1 is binding energy between a vacancy and a Zn atom.

• 社団法人日本物理学会の論文
• 1964-08-05

著者

• Hashimoto Fumio

  Department of Horticultural Science, Faculty of Agriculture, Kagoshima University

• Hashimoto Fumio

  Department Of Horticultural Science Faculty Of Agriculture Kagoshima University

• Ohta Mutsuo

  Department Of Physics Faculity Of Science Osaka City University

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