New Structures of Quantized Current Plateaus in Semiconductor Turnstile Devices

概要

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Qtuantized current plateaus appear in the I - V char'arcteristics of turnstile devices re?tlizedby naodtrlating the tunnel l*arriers with a radio f'reqtrency (rf') signal of' freqtrency .f and phasedifference m. We report two new restrlts. (l) New fine strtrcttrres resulting f'rona the qtrantized levelspacing bE appear. Then, the quantized ctrrrent flows through the barriers via several excitedstates of the system with a fixed ntrtaaber of electrons, as the source drain voltage increases. Thesestructtrres are suneared otrt when the teznperature knT beconaes couaaparable to AE. Howeverthe qtrantized plateaus remain. The quantized plttteatns ;rre washed otrt when k5T becon'xescomparable to the charging energy e'/C, xvhere C is the capacitance of the dot. (2) When therf freqtmency f becomes larger than the le;tkage ctrrrent J(f m O)/e, which is the titne-averagedctrrrent at the freqttency f : 0, the tiraae-averatged cturrent J" is 3trantized in the adiabaticregirne. On the other hand, when f is stnaller than ,J(.f' : O)/e, J ' is nauch larger than thequantized ctrrrent.
社団法人日本物理学会の論文
1998-11-15