Spatial Variation of Local Current Noise Due to Impurity Scattering and Local Charge-Induced Noise
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概要
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We analyze the noise characteristics associated with the fluctuation of the number of electrons in two terminal elements. We find that the local current noise on leads around a point contact varies spatially. The local current noise resulting from short wavelength fluctuations differs from the standard one resulting from long wavelength fluctuations. The excess shot noise near the point contact decreases towards the leads, and the characteristic length is the mean free path of electrons l. At distances longer than l from the contact, the local noise approaches the pure thermal noise given by 4k_BTG_Q with the quantized conductance G_Q. We also find that the tunneling current of resonant tunneling devices (RTDs) is strongly influenced by the existence of the immobile charges captured by the localized traps. By treating the electron capture and emission processes kinematically, we simulate random telegraph noise (RTN).
- 社団法人応用物理学会の論文
- 1995-08-30
著者
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Isawa Yoshimasa
Department Of Physical Electronics Faculty Of Engineering Hiroshima University
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HIRAKI Yoshihiro
Department of Physical Electronics, Faculty of Engineering, Hiroshima University
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NAKANO Hisanori
Department of Physical Electronics, Faculty of Engineering, Hiroshima University
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