Dynamics of Quantum-Dot Turnstile in Adiabatic Approximation
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概要
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We derive an expression for the current in a quantum-dot turnstile device in the lowest order of tunnel processes. The electrochemical potential μ in the quantum dot is determined from the current continuity across both barriers. By the use of the adiabatic approximation, the quantized current plateaus in the I-V curve are obtained for the device with symmetric barriers oscillating with a phase difference π. We find that both the height and the position of the steps change as the gate voltage is varied. We also show how the current and the electron number in a quantum dot vary as a function of time.
- 社団法人日本物理学会の論文
- 1994-07-15
著者
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HATANO Tsuyoshi
Department of Physical Electronics, Faculty of Engineering, Hiroshima University
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ISAWA Yoshimasa
Department of Physical Electronics, Faculty of Engineering, Hiroshima University
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Hatano T
Hiroshima Univ. Higashihiroshima
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Hatano Tsuyoshi
Department Of Physical Electronics Faculty Of Engineering Hiroshima University
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Isawa Yoshimasa
Department Of Physical Electronics Faculty Of Engineering Hiroshima University
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