Transport through Discrete Energy Levels in Quantum Dots
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概要
- 論文の詳細を見る
The effect of potential fluctuations on a semiconductor quantum dot is exhibited. The height of a series of single peaks in the Coulomb oscillation (CLO) becomes irregular in the presence of potential fluctuations. As the source-drain voltage becomes larger than the quantized level spacing, a single peak broadens and turns into a multiple peak. The asymmetry of the barrier heights and the potential fluctuations in the dot are crucial in this regime. The influence of potential fluctuations on wave functions plays an important role in the transport phenomena in submicrometer devices near pinch-off.
- 社団法人応用物理学会の論文
- 1995-08-30
著者
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Isawa Yoshimasa
Department Of Physical Electronics Faculty Of Engineering Hiroshima University
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SUWA Futoshi
Department of Physical Electronics, Faculty of Engineering, Hiroshima University
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