Electrical Resistivity of Doped Mott Insulators V_<2-y>O_3
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概要
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The electrical resistivity of metallic V3 .,03 is calculated assuming that the antiferromagneticspin fluctuations dominate the scattering n'nechanisrn for the conduction electrons. The spin flu-ctuations are described in terms of the self-consistent renorrnalization theory with parametervalues estimated from the results of a neutron inelastic scattering experiment. The final resultagrees reasonably well with the experimental results.
- 社団法人日本物理学会の論文
- 1996-04-15
著者
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Nishimoto Satoshi
Department Of Physics Faculty Of Science And Technology Science University Of Tokyo
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MORIYA Toru
Department of Physics, Osaka University
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Moriya Toru
Department Of Physics Faculty Of Science And Technology Science University Of Tokyo
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Moriya Toru
Deparment Of Physics Wasea University
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