Electron Irradiation-Induced Lattice Defects in Covalent Semiconductors:{113}Stacking Fault

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概要

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• The atomic configurations and excess energies of the {113} stacking faults incovalent semiconductors have been calculated for the first time using the tight-binding type electronic theory (bond orbital model) and the Born-Mayer repulsivepotential. The stability of dislocation loops produced by electron irradiation isalso discussed.

• 社団法人日本物理学会の論文
• 1983-01-15

著者

• Kojima Kenichi

  Department Of Physics Yokohama City University

• MASUDA Kin-ichi

  Department of Materials Science and Engineering,Tokyo Institute of Technology

• Masuda Kin-ichi

  Department Of Materials Science And Engineering Tokyo Institute Of Technology

• Kojima Kenichi

  Department Of Hematology Ogikubo Hospital

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