Electron Irradiation-Induced Lattice Defects in Covalent Semiconductors:{113}Stacking Fault
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概要
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The atomic configurations and excess energies of the {113} stacking faults incovalent semiconductors have been calculated for the first time using the tight-binding type electronic theory (bond orbital model) and the Born-Mayer repulsivepotential. The stability of dislocation loops produced by electron irradiation isalso discussed.
- 社団法人日本物理学会の論文
- 1983-01-15
著者
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Kojima Kenichi
Department Of Physics Yokohama City University
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MASUDA Kin-ichi
Department of Materials Science and Engineering,Tokyo Institute of Technology
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Masuda Kin-ichi
Department Of Materials Science And Engineering Tokyo Institute Of Technology
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Kojima Kenichi
Department Of Hematology Ogikubo Hospital
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