Effects of External Shear Stress on the Smallest Double Kink Nucleation Process in Si

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概要

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• A tight-binding type electronic theory (molecular approximation) is used tocalculate the formation energy of the double kink E d . for a 1/2[110](ITI) (perfectglide set) screw dislocation in covalent semiconductor Si. Effects of external shearstress on the double kink nucleation process are investigated in detail. It is shownthat the calculated stress dependence of the E.. is in good agreement with theexperimental results of the activation energy for the screw dislocation motion inSi.

• 社団法人日本物理学会の論文
• 1985-02-15

著者

• Kojima K

  Hiroshima Univ. Higashi‐hiroshima

• Kojima Kenichi

  Department Of Hematology Ogikubo Hospital

• Kinichi MASUDA

  Department of Materials Science and Engineering,Tokyo Institute of Technology

• USHIO Hirofumi

  Department of Physics,Yokohama City University

• Kinichi Masuda

  Department Of Materials Science And Engineering Tokyo Institute Of Technology

• Ushio Hirofumi

  Department Of Physics Yokohama City University

• Masuda Kinichi

  Department of Materials Science and Engineering,Tokyo Institute of Technology

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