Electron Spin Echo Decay Behaviours of Phosphorus Doped Silicon
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概要
- 論文の詳細を見る
Electron spin echo decay behaviours of the shallow trapped donor electrons in the phosphorus doped silicon at liquid helium temperatures have been studied. The spin echo signals were observed for the samples whose donor concentrations were less than 2.0×10<17>cm^<-3>. From the experimental date the region of the concentration has been divided into three. In each region has been observed the characteristic spin echo decay behaviour, which has been analyzed by using the stochastic model.
- 社団法人日本物理学会の論文
- 1972-09-05
著者
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CHIBA Meiro
Department of Applied Physics, University of Fukui
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Chiba Meiro
Department Of Applied Physics Fukui University
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Chiba Meiro
Department Of Physics Faculty Of Science Kyoto University:(present Address) Institute Of Atomic Ener
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HIRAI Akira
Department of Physics, Faculty of Science, Kyoto University
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Hirai Akira
Department Of Internal Medicine Chiba Municipal Hospital
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Hirai Akira
Departent Of Materials Science And Engineering Faculty Of Engineering Kyushu Institute Of Technology
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