Interband Landau Emission Due to Magnetoelectric-Photo Effect in Bulk InSb:Quantum Aspects of Stimulated Emission at High Magnetic Fields

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Stimulated, interband Landau emission originating from excitation of electronsand holes by the action of the J X H force at the quantum limit has been observed, ac-companied by a remarkable current saturation in the V-I curve, for the first time inbulk z-type InSb at 4.2-135 K when passing a current density J as low as 16-40A / cm' in perpendicular to a magnetic field H up to 7 T. Such an outstanding low valueof the critical current density J. for lasing is considered to originate from extremelyhigh value of the density of states of electrons populated in the lowest Landau level atthe quantum limit. In addition to the tunability of the emission frequency controlledprimarily by the magnetic field, lowering of Landau levels, which results in a virtualdecrease of the energy gap of about 20 meV at around J. for H= 7 T, has also beenobserved in proportion to the current densities. The lowering of Landau levels can beinterpreted in terms of the action of the strong electric field induced along JXHdirection.[stimulated infrared emission, tunable semiconductor laser, lasing at quantum ll limit, electromagnetic-force excitation in bulk InSbl
社団法人日本物理学会の論文
1991-07-15